? 2006 ixys all rights reserved g = gate d = drain s = source tab = drain ds99423e(04/06) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 100 a 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 1 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 2.0 pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) IXTA4N60P ixtp4n60p ixtu4n60p ixty4n60p v dss = 600 v i d25 = 4 a r ds(on) 2.0 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c4a i dm t c = 25 c, pulse width limited by t jm 10 a i ar t c = 25 c4a e ar t c = 25 c15mj e as t c = 25 c 150 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 30 p d t c = 25 c89w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g to-252 (ixty) g s (tab) to-251 (ixtu) (tab) d g s
ixys reserves the right to change limits, test conditions, and dimensions. IXTA4N60P ixtp4n60p ixtu4n60p ixty4n60p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 2.8 4.6 s c iss 635 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 65 pf c rss 5.7 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d =0.5 i d25 10 ns t d(off) r g = 30 (external) 50 ns t f 20 ns q g(on) 13.0 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 6.0 nc q gd 4.0 nc r thjc 1.41 c/w r thcs (to-220) 0.25 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 4 a i sm repetitive 12 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 4 a 500 ns -di/dt = 100 a/ s to-263 (ixta) outline to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-251 (ixtu) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 .086 .094 a1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 d 5.97 6.22 .235 .245 e 6.35 6.73 .250 .265 e 2.28 bsc .090 bsc e1 4.57 bsc .180 bsc h 17.02 17.78 .670 .700 l 8.89 9.65 .350 .380 l1 1.91 2.28 .075 .090 l2 0.89 1.27 .035 .050 1. gate 2. drain 3. source 4. drain ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 3. output characteristics @ 125 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 012345678910 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 4a i d = 2a v gs = 10v fig. 6. drain current vs. case temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0123 45678 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v IXTA4N60P ixtp4n60p ixtu4n60p ixty4n60p
ixys reserves the right to change limits, test conditions, and dimensions. IXTA4N60P ixtp4n60p ixtu4n60p ixty4n60p fig. 11. capacitance 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 02468101214 q g - nanocoulombs v g s - volts v ds = 300v i d = 2a i g = 10ma fig. 7. input admittance 0 0.6 1.2 1.8 2.4 3 3.6 4.2 4.8 5.4 6 44.555.5 66.577.5 v g s - volts i d - amperes t j =125 o c 25 o c -40 o c fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 10 01234567 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 2 4 6 8 10 12 14 0.4 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 13. maximum transient thermal re s is t an ce 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
? 2006 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.1 1.0 10.0 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w to-252 aa (ixty) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 IXTA4N60P ixtp4n60p ixtu4n60p ixty4n60p
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